UPG2156TB

DATA SHEET www.DataSheet4U.com GaAs INTEGRATED CIRCUIT µPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH DESCRIPTION The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and high linearity. FEATURES Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2 High power switching : Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1/2 6-pin super minimold package (2.1 × 2.0 × 0.9 mm) APPLICATION GSM Triple/Quad band digital cellular ORDERING INFORMATION Part Number Order Number Package Marking G4V Supplying Form Embossed tape 8 mm wide Pin 4, 5, 6 face the perforation side of the tape Qty 3 kpcs/reel µPG2156TB-E4 µPG2156TB-E4-A 6-pin super minimold (Pb-Free) Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2156TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor...