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UT28F256 Dataheets PDF



Part Number UT28F256
Manufacturers Aeroflex Circuit Technology
Logo Aeroflex Circuit Technology
Description Radiation-Hardened 32K x 8 PROM
Datasheet UT28F256 DatasheetUT28F256 Datasheet (PDF)

Standard Products www.DataSheet4U.com UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz • Derating: 3mA/MHz - Standby: 2mA maximum (post.

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Standard Products www.DataSheet4U.com UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz • Derating: 3mA/MHz - Standby: 2mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 Total dose: 1E6 rad(Si) LETTH (0.25) ~ 100 MeV-cm2/mg SEL Immune >128 MeV-cm 2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion Memory cell LET threshold: >128 MeV-cm 2/mg q QML Q & V compliant part - AC and DC testing at factory q Packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory q V DD : 5.0 volts + 10% q Standard Microcircuit Drawing 5962-96891 PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments. A(14:0) DECODER MEMORY ARRAY SENSE AMPLIFIER CE PE OE PROGRAMMING CONTROL LOGIC DQ(7:0) Figure 1. PROM Block Diagram 1 www.DataSheet4U.com DEVICE OPERATION The UT28F256 has three control inputs: Chip Enable (CE), Program Enable (PE), and Output Enable (OE); fifteen address inputs, A(14:0); and eight bidirectional data lines, DQ(7:0). CE is the device enable input that controls chip selection, active, and standby modes. AssertingCE causes I DD to rise to its active value and decodes the fifteen address inputs to select one of 32,768 words in the memory. PE controls program and read operations. During a read cycle, OE must be asserted to enable the outputs. PIN CONFIGURATION PIN NAMES A(14:0) CE OE PE DQ(7:0) Address Chip Enable Output Enable Program Enable Data Input/Data Output Table 1. Device Operation Truth Table 1 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 V SS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 V DD PE A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 Notes: 1. “X” is defined as a “don’t care” condition. 2. Device active; outputs disabled. OE X 0 1 1 PE 1 1 0 1 CE 1 0 0 0 I/O MODE Three-state Data Out Data In Three-state MODE Standby Read Program Read 2 ABSOLUTE MAXIMUM RATINGS 1 (Referenced to VSS ) SYMBOL V DD VI/O T STG PD TJ ΘJC II PARAMETER DC supply voltage Voltage on any pin .


KIA7042AT UT28F256 WM-034C


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