UT28F256

Standard Products www.DataSheet4U.com UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet December 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time (-55 oC to +125 oC) q TTL compatible input and TTL/CMOS compatible output levels q Three-state data bus q Low operating and standby current - Operating: 125mA maximum @25MHz Derating: 3mA/MHz - Standby: 2mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 Total dose: 1E6 rad(Si) LETTH (0.25) ~ 100 MeV-cm2/mg SEL Immune >128 MeV-cm 2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion Memory cell LET threshold: >128 MeV-cm 2/mg q QML Q & V compliant part - AC and DC testing at factory q Packaging options: - 28-lead 50-mil center flatpack (0.490 x 0.74) - 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory q V DD : 5.0 volts + 10% q Standard Microcircuit Drawing 5962-96891 PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness,...