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2SC1971

Part Number	2SC1971
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 1, 2009
Detailed Description	com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCR...
Datasheet	2SC1971 PDF File

Overview

com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.
5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i .
w 17 4 2 12.
5 1.
5 150 -55~150 V V n c .
i m e A W Collector Power Dissipation @Ta=25℃ Tj Tstg Junction Temperature Storage Temperature Range ℃ ℃ THERMAL CHARACTER...

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