STL150N3LLH6

www.DataSheet4U.com STL150N3LLH6 N-channel 30 V, 0.0016 Ω, 33 A PowerFLAT™ (6x5) STripFET™ VI DeepGATE™ Power MOSFET Preliminary Data Features Type STL150N3LLH6 VDSS 30 V RDS(on) max 0.002 Ω ID 33 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. Table 1. Device summary Marking 150N3LLH6 Package PowerFLAT™ (6x5) Packaging Tape and reel Order code STL150N3LLH6 January 2009 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.DataSheet4U.com Contents STL150N3LLH6 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mecha...