FDS4895C

www.DataSheet4U.com FDS4895C June 2005 FDS4895C Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V Q2: P-Channel RDS(on) = 63mΩ @ VGS = –4.5V High power and handling capability in a widely used surface mount package –4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V 5.5A, 40V Application Motor Control DC/DC conversion D1 D D1 D DD2 D2 D 5 6 G2 S2 G G1 S S1 S Q2 4 3 SO-8 Pin 1 SO-8 7 8 Q1 2 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25°C unless otherwise noted Parameter Q1 40 (Note 1a) Q2 40 ±20 –4.4 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation ±20 5.5 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W Package Marking and Ordering Information Device Marking FDS4895C Device FDS4895C Reel Size 13” Tape width 12mm Quantity 2500 units ©2005 Fairchild Semiconductor...