AO8822

www.DataSheet4U.com AO8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO8822 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 20V ID = 7 A (VGS = 10V) RDS(ON) < 21mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) RDS(ON) < 28mΩ (VGS = 3.6V) RDS(ON) < 32mΩ (VGS = 2.5V) RDS(ON) < 50mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum 20 ±12 7 5.7 30 1.5 0.96 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 63 101 64 Max 83 130 83 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8822 www.DataSheet4U.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Paramete...