AO8403

www.DataSheet4U.com AO8403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications). AO8403L is a Green Product ordering option. AO8403 and AO8403L are electrically identical. Features VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO8403 www.DataSheet4U.com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ...