(MBR850 / MBR860) Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
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MBR850 thru MBR860
Dimensions TO-220AC A C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 ...
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MBR850 thru MBR860
Dimensions TO-220AC A C
Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39
Wide Temperature Range and High Tjm
Schottky Barrier Rectifiers
C(TAB)
A C
A=Anode, C=Cathode, TAB=Cathode VRRM V 50 60 VRMS V 35 42 VDC V 50 60
MBR850 MBR860
Symbol I(AV) IFSM dv/dt VF
Characteristics Maximum Average Forward Rectified Current @TC=125oC
Maximum Ratings 8 150 10000 IF=8A @TJ=125oC IF=8A @TJ=25oC IF=16A @TJ=25oC @TJ=25oC @TJ=125oC 0.70 0.80 0.95 0.1 15 3.0 250 -55 to +150 -55 to +175
Unit A A V/us V
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) Maximum Forward Voltage (Note 1) Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range
IR ROJC CJ TJ TSTG
mA
o
C/W pF
o o
C C
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient prot...