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K2961

Toshiba Semiconductor
Part Number K2961
Manufacturer Toshiba Semiconductor
Description 2SK2961
Published Aug 26, 2009
Detailed Description 2SK2961 com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Dr...
Datasheet PDF File K2961 PDF File

K2961
K2961

Overview
2SK2961 com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.
2 Ω (typ.
) : |Yfs| = 2.
0 S (typ.
) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.
8~2.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 60 60 ±20 2.
0 6.
0 ...


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