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TC58DVG02A1FT00

Part Number	TC58DVG02A1FT00
Manufacturer	Toshiba Semiconductor
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Published	Aug 25, 2009
Detailed Description	TC58DVG02A1FT00 www.DataSheet4U.com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M ...
Datasheet	TC58DVG02A1FT00 PDF File

Overview

TC58DVG02A1FT00 www.
DataSheet4U.
com TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M u 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.
3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages).
The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both a...

Similar Datasheet

TC58DVG02A1FT00 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS - Toshiba Semiconductor

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