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ST 2SC2786
NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM ...
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ST 2SC2786
NPN Silicon Epitaxial Planar
Transistor for FM RF amplifier and local oscillator of FM tuner. The
transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
Features
1) High gain bandwidth product 2) Small output capacitance 3) Low noise figure
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 30 20 4 20 20 250 150 -55 to +150 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/05/2003
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ST 2SC2786
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group M L K Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=4V Base Emitter Voltage at VCE=6V, IC=1mA Collector Saturation Voltage at IC=10mA, IB=1mA Gain Bandwidth Product at VCE=6V, IE=-1mA Power Gain at VCE=6V, IE=-1mA at f=100MHz, RG=50Ω Collector Base Time Constant at VCE=6V, IE=-1mA, f=31.9MHz Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=-1mA at f=100MHz, RG=50Ω NF 3.0 5 dB Gpe 18 22 dB hFE hFE hFE ICBO IEBO V...