ST2SC2310

www.DataSheet4U.com ST 2SC2310 NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC -IE Ptot Tj TS Value 55 50 5 100 100 200 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 www.DataSheet4U.com ST 2SC2310 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=12V, IC=2mA Current Gain Group B C Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=12V, IC=2mA Base Emitter Voltage at IC=2mA, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10μA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IC=10μA Noise Figure at VCE=6V, IC=0.1mA, f=120Hz, Rg=500Ω Small Signal Input Impedance at VCE=5V, IC=0.1mA,f=270Hz Small Signal Feedback Ratio at VCE=5V, IC=0.1mA,f=270Hz Sma...