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ST 2SC2120
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Th...
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ST 2SC2120
NPN Silicon Epitaxial Planar
Transistor for switching and AF amplifier applications. The
transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 5 800 160 600 150 -55 to +150 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
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ST 2SC2120
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y at VCE=1V, IC=700mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA VCEO 30 V COB 13 pF VBE 0.5 0.8 V fT 120 MHz VCE(sat) 0.5 V IEBO 0.1 μA ICBO 0.1 μA hFE hFE hFE 100 160 35 200 320 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a co...