ST2SC1008

www.DataSheet4U.com ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 80 60 8 700 800 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 2 V, IC = 50 mA Current Gain Group Symbol R O Y G hFE hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat fT Cob Min. 40 70 120 200 80 60 8 30 - Typ. 8 Max. 80 140 240 400 0.1 0.1 0.4 1.1 - Unit µA µA V V V V V MHz pF Collector Base Cutoff Current at VCB = 60 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 10 V, IC = 50 mA Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, St...