JS28F640J3D-75

www.DataSheet4U.com Intel® Embedded Flash Memory (J3 v. D) (32, 64, and 128 Mbit) Datasheet Product Features ■ ■ Architecture — High-density symmetrical 128-Kbyte blocks —128 Mbit (128 blocks) —64 Mbit (64 blocks) —32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 25 ns 8-word and 4-word Asynchronous page-mode reads — 32-Byte Write buffer —4 µs per Byte Effective programming time System Voltage and Power — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V ■ ■ Security — Enhanced security options for code protection — 128-bit Protection Register —64-bit Unique device identifier —64-bit User-programmable OTP cells — Absolute protection with V PEN = GND — Individual block locking — Block erase/program lockout during power transitions Software — Program and erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible Quality and Reliability — Operating temperature: -40 °C to +85 °C — 100K Minimum erase cycles per block — 0.13 µm ETOX™ VIII Process Packaging — 56-Lead TSOP package — 64-Ball Intel® Easy BGA package ■ ■ ■ The Intel® Embedded Flash Memory J3 Version D (J3 v. D) provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel 0.13 µm ETOX™ VIII process technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 v. D device brings reliable, low-voltage capability (3 V read, program, a...