KRF7205

SMD Type HEXFET Power MOSFET KRF7205(IRF7205) Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching MOSFET IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ TA = 25 Continuous Drain Current, VGS @ 10V @ TA = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *2 Maximum Junction-to-Ambient *3 Junction and Storage Temperature Range VGS dv/dt R JA Symbol ID ID IDM Rating -4.6 -3.7 -15 2.5 0.02 20 -3 50 -55 to + 150 Unit A @TC = 25 PD W V V V/ns /W TJ, TSTG *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -4.6A, di/dt 90A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7205(IRF7205) Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Internal Drain Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Continuous Source Current Body Diode) Pulsed Source Current Diode Forw...