C4706

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4706 900 600 7 14(Pulse28) 7 130(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4706 100max 100max 600min 10 to 25 0.5max 1.2max 6typ 160typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=–1.5A VCB=10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA 19.9±0.3 V 4.0 a b ø3.2±0.1 V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 35.7 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 1.05 IB2 (A) –3.5 ton (µs) 1max tstg (µs) 5max tf (µs) 0.7max 5.45±0.1 B C E 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 14 V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V) 2 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 14 (V CE =4V) 6 1. 12 A 1.2 A 12 Collector Current I C (A) 800mA Collector Current I C (A) 10 10 600mA 8 400m A 8 emp ) mp) e Te (Cas 1 V B E (sat) Cas eT 6 200mA 6 4 4 ˚C ( 25˚C 125 ...