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KRF7805Z

Guangdong Kexin Industrial

HEXFET Power MOSFET

SMD Type HEXFET Power MOSFET KRF7805Z IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Curr...


Guangdong Kexin Industrial

KRF7805Z

File Download Download KRF7805Z Datasheet


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SMD Type HEXFET Power MOSFET KRF7805Z IC IC Features Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TA = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Drain-Source Voltage Operating Junction and Storage Temperature Range Junction-to-Ambient Junction-to-Drain Lead Single Pulse Avalanche Energy*3 Avalanche Current *2 *1 Pulse width 400 s; duty cycle 2%. VGS VDS TJ,TSTG R JA R JL Symbol ID ID IDM Rating 16 12 120 2.5 1.6 0.02 20 30 -55 to + 150 50 20 72 12 Unit A *1 *1 PD PD W W W/ V V /W /W mJ A EAS IAR *2 Repetitive rating; pulse width limited by max. junction temperature. *3 Starting TJ = 25 , L = 0.94mH,RG = 25 , IAS = 12A. www.kexin.com.cn 1 SMD Type KRF7805Z Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current D...




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