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KRF7301

Guangdong Kexin Industrial

HEXFET Power MOSFET

SMD Type HEXFET Power MOSFET KRF7301 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mos...


Guangdong Kexin Industrial

KRF7301

File Download Download KRF7301 Datasheet


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SMD Type HEXFET Power MOSFET KRF7301 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TC = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*2 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ,TSTG R JA Symbol ID ID ID IDM PD Rating 5.7 5.2 4.1 21 2 0.016 12 5 -55 to + 150 62.5 /W W W/ V V/ns A Unit *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 2.6A, di/dt 100A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7301 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Cu...




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