HEXFET Power MOSFET
SMD Type
HEXFET Power MOSFET KRF7301
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mos...
Description
SMD Type
HEXFET Power MOSFET KRF7301
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TC = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*2 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ,TSTG R JA Symbol ID ID ID IDM PD Rating 5.7 5.2 4.1 21 2 0.016 12 5 -55 to + 150 62.5 /W W W/ V V/ns A Unit
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
2.6A, di/dt
100A/
s, VDD V(BR)DSS,TJ 10sec.
150
*3 Surface mounted on FR-4 board, t
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SMD Type
KRF7301
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Cu...
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