KRF7104

SMD Type HEXFET Power MOSFET KRF7104 IC IC Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TC= 25 PD Rating -2.3 -1.8 -10 2.0 0.016 12 -3 -55 to + 150 62.5 Unit A W W/ V V/nS /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -2.3A, di/dt 100A/ s, VDD 10sec. V(BR)DSS,TJ 150 www.kexin.com.cn 1 SMD Type KRF7104 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Internal Drain Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Cu...