KRF2805S

SMD Type HEXFET Power MOSFET KRF2805S Features Advanced Process Technology + 0 .1 1 .2 7 -0 .1 Transistors IC TO-263 +0.1 1.27-0.1 +0.2 4.57-0.2 Unit: mm Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Allowed up to Tjmax + 0 .2 5 .2 8 -0 .2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 Fast Switching + 0 .2 8 .7 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt* Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) * ISD 104A, di/dt 240A/ s, VDD V(BR)DSS,TJ R JC R JA 175 VGS EAS IAR EAR dv/dt TJ,TSTG 2 -55 to + 175 300 0.75 40 /W Symbol ID ID IDM PD Rating 135 96 700 200 1.3 20 380 Fig.1.2 W W/ V mJ A mJ V/ns A Unit Fig1. Unclamped Inductive Test Circuit Fig 2. Unclamped Inductive Waveforms 5 .6 0 175 Operating Temperature 11gate Gate 22drain Drain 33source Source www.kexin.com.cn 1 SMD Type KRF2805S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance ...