RADIATION HARDENED POWER MOSFET THRU-HOLE
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PD - 91299D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Product Summary
Part Number IRHM9...
Description
www.DataSheet4U.com
PD - 91299D
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)
Product Summary
Part Number IRHM9250 IRHM93250 Radiation Level 100K Rads (Si) 300K Rads (Si)
IRHM9250 JANSR2N7423 200V, P-CHANNEL REF: MIL-PRF-19500/662
RAD-Hard HEXFET TECHNOLOGY
™ ®
RDS(on) I D QPL Part Number 0.315Ω -14A JANSR2N7423 0.315Ω -14A JANSF2N7423
International Rectifier’s RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single...
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