PHP32N06LT

www.DataSheet4U.com PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP32N06LT in SOT78 (TO220AB) PHB32N06LT in SOT404 (D2-PAK). 2. Features s TrenchMOS™ technology s Logic level compatible. 3. Applications s General purpose switching s Switched mode power supplies. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 (TO-220AB), SOT404 (D2-PAK), simplified outline and symbol Description gate (g) mb mb d Simplified outline Symbol drain (d) source (s) mounting base; connected to drain (d) [1] g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors www.DataSheet4U.com PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 20 A Tj = 25 °C; VGS = 4.5 V; ID = 20 A Typ 30 Max 60 34 97 175 40 43 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance ...