STP22NM60N

STB22NM60N, STF22NM60N, STI22NM60N STP22NM60N, STW22NM60N N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247 Features Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 D²PAK 123 I²PAK 3 2 1 TO-220FP TO-247 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' 3 Table 1. Device summary Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N Marking 22NM60N Package D²PAK TO-220FP I²PAK TO-220 TO-247 !-V Packaging Tape and reel Tube January 2011 Doc ID 15853 Rev 4 1/23 www.st.com 23 Contents Contents STB/F/I/P/W22NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . ...