NTLUS4195PZ

www.DataSheet4U.com NTLUS4195PZ Power MOSFET Features −30 V, −4.0 A, mCoolt Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Lowest RDS(on) in 1.6x1.6 Package ESD Protected This is a Halide Free Device This is a Pb−Free Device http://onsemi.com MOSFET V(BR)DSS −30 V RDS(on) MAX 90 mW @ −10 V 155 mW @ −4.5 V ID MAX −3.0 A −2.0 A Applications High Side Load Switch PA Switch and Battery Switch Optimized for Power Management Applications for Portable Products, such as Cell Phones, PMP, DSC, GPS, and others Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State t≤5s Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ESD ID PD Symbol VDSS VGS ID Value −30 ±20 −3.0 −2.3 −4.0 1.5 2.3 −2.0 −1.5 0.6 −17 -55 to 150 −1.0 260 W A °C A °C A W 1 6 UDFN6 CASE 517AU mCOOLt G Units V V A D S MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) P−Channel MOSFET MARKING DIAGRAM 1 AC MG G AC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Power Dissipation (Note 2) Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Sol...