PH7030L
N-channel TrenchMOS logic level FET
Rev. 05 — 29 June 2009
Product data sheet
1. Product profile
1.1 General ...
PH7030L
N-channel TrenchMOS logic level FET
Rev. 05 — 29 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
1.3 Applications
DC-to-DC convertors Notebook computers
Portable equipment Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
ID drain current
Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3
Ptot total power dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge
VGS = 5 V; ID = 20 A; VDS = 10 V; Tj = 25 °C; see Figure 11
Static characteristics
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 9; see Figure 10
Min Typ Max Unit - - 30 V - - 68 A - - 62.5 W
- 3.2 - nC
- 6.9 7.9 mΩ
NXP Semiconductors
PH7030L
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected to drain
3. Ordering information
Simpli...