PSMN1R2-25YL

PSMN1R2-25YL www.DataSheet4U.com N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power converters „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Tj Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 25 V; RGS = 50 Ω; unclamped VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 12; see Figure 13 Typ Max 25 100 121 150 677 Unit V A W °C mJ drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation junction temperature Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge 11.9 50.6 nC nC NXP Semiconductors www.DataSheet4U.com PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Quick reference …continued Conditio...