EIC8596-15

www.DataSheet4U.com EIC8596-15 UPDATED 04/25/2006 8.50-9.60 GHz 15-Watt Internally Matched Power FET Excelics EIC8596-15 .827±.010 .669 .120 MIN FEATURES 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 31% Power Added Efficiency -46 dBc IM3 at PO = 31.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 4500mA Drain Current at 1dB Compression f = 8.50-9.60GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 31.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 41.5 6.0 TYP 42.5 7.0 MAX UNITS dBm dB ±0.6 31 4600 -43 -46 8500 -2.5 2.0 11000 -4.0 2.5 o dB % 5200 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 85 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depend...