EIC8596-12

www.DataSheet4U.com EIC8596-12 UPDATED 07/25/2007 8.50-9.60 GHz 12-Watt Internally Matched Power FET FEATURES 8.50– 9.60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 7.0 dB Power Gain at 1dB Compression 34% Power Added Efficiency -46 dBc IM3 at PO = 30.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 8.50-9.60GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 8.50-9.60GHz -43 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.60GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 62 mA MIN 40.5 6.0 TYP 41.5 7.0 MAX UNITS dBm dB ±0.6 34 3300 -46 6200 -2.5 2.5 7800 -4.0 3.0 o dB % 3700 mA dBc mA V C/W Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipati...