EIC7678-25

www.DataSheet4U.com EIC7678-25 UPDATED 07/23/2008 7.60-7.80 GHz 25-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES 7.60– 7.80GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +44.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC7678-25 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1) Output Power at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Gain at 1dB Compression f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Gain Flatness f = 7.60-7.80GHz VDS = 10 V, IDSQ ≈ 6500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 6500mA f = 7.60-7.80GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2) MIN 43.5 7.5 TYP 44.5 8.5 MAX UNITS dBm dB ±0.6 30 6800 11 -2.5 1.3 7700 13 -4.0 1.6 o dB % mA A V C/W f = 7.60-7.80GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 130 mA 2) Overall Rth depends on case mounting. Note: 1) Tested with 50 Ohm gate resistor. MAXIMUM RATING AT 25°C1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15 -5 38.5 dBm 175 oC -65 to +175 oC 93W CONT...