Internally Matched Power FET
www.DataSheet4U.com
EIC5972-12
UPDATED 11/10/2006
5.90-7.20 GHz 12-Watt Internally Matched Power FET
Excelics
EIC5972-...
Description
www.DataSheet4U.com
EIC5972-12
UPDATED 11/10/2006
5.90-7.20 GHz 12-Watt Internally Matched Power FET
Excelics
EIC5972-12
945 .803
.079 MIN .079 MIN
FEATURES
5.90– 7.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression 36% Power Added Efficiency -46 dBc IM3 at Pout = 30.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.024
YYWW
SN
.315 .685 .617 .004 .168 .055 .095
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 5.90-7.20GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression f = 5.90-7.20GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 7.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance
o
3
Caution! ESD sensitive device. MIN
40.5 8.0
TYP
41.5 9.0
MAX
UNITS
dBm dB
±0.8 36 3400 -43 -46 6000 -2.5 2.5 7500 -4.0 3.0
o
dB %
3800
mA dBc mA V C/W
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA
2) S.C.L. = Single Carrier Level.
Note: 1) Tested with 50 Ohm gate resistor.
3) Overall Rth depends on case mounting.
MAXIMUM ...
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