EIC5964-8

www.DataSheet4U.com EIC5964-8 5.90-6.40 GHz 8-Watt Internally-Matched Power FET FEATURES 5.90 – 6.40 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-8 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 5.90-6.40GHz Drain Current at 1dB Compression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40 GHz MIN 38.5 9 TYP 39.5 10 MAX UNITS dBm dB ±0.6 37 2200 -43 -46 4000 -2.5 3.5 4500 -4.0 4.0 o dB % 2600 mA dBc mA V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall R...