EIC5359-8

www.DataSheet4U.com EIC5359-8 5.30-5.90GHz, 8W Internally Matched Power FET 5.30-5.90 GHz BANDWIDTH Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10 dB Power Gain at 1dB Compression 33% Power Added Efficiency -46 dBc IM3 at Po = 28.5 dBm Hermetic Metal Flange Package Excelics EIC5359-8 YM SN ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC5359-8 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA Gain at 1dB Compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA Power Added Efficiency at 1dB compression f=5.30-5.90GHz, Vds=10V, Idsq=2200mA Drain Current at 1dB Compression Output 3 Order Intermodulation Distortion f=5.90GHz, ∆f=10MHz 2-Tone Test. Pout=28.5dBm S.C.L Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=40mA rd MIN 38.5 9 TYP 39.5 10 33 2200 MAX UNIT dBm dB % P1dB G1dB PAE Id1dB IM3 Idss Vp Rth 2600 mA dBc -43 -46 4000 -2.5 3.5 4500 -4 4 mA V o Thermal Resistance (Au-Sn Eutectic Attach) C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation CONTINUOUS1,2 10V -4.5V Idss 80mA @ 3dB Compression 150 oC -65 to +150 oC 32W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings ma...