EIC4450-4

www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET FEATURES 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 11.5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device. MIN 35.5 10.5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 4.40-5.00GHz Drain Current at 1dB Compression f = 4.40-5.00GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 TYP 36.5 11.5 MAX UNITS dBm dB ±0.6 37 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o dB % 1500 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current ...