EIC4450-10

www.DataSheet4U.com EIC4450-10 UPDATED 07/25/2007 4.40-5.00 GHz 10-Watt Internally Matched Power FET FEATURES 4.40–5.00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 4.40-5.00GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 4.40-5.00GHz Drain Current at 1dB Compression f = 4.40-5.00GHz -43 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.00GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 MIN 39.5 9.0 TYP 40.5 10.0 MAX UNITS dBm dB ±0.6 35 3300 -46 5800 -2.5 2.5 6400 -4.0 3.0 o dB % 3800 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Note: 1. Tested with 50 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation C...