EIC2832-2

www.DataSheet4U.com EIC2832-2 UPDATED 02/14/2006 2.80-3.20 GHz 2-Watt Internally Matched Power FET Excelics EIC2832-2 .827±.010 .669 .120 MIN FEATURES 2.80– 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Output Power at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 2.80-3.20GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.20GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 32.5 11.0 TYP 33.5 12.0 MAX UNITS dBm dB ±0.6 35 600 -43 -46 1000 -2.5 11 1250 -4.0 12 o dB % 700 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 10 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on ca...