EIC2224-15

www.DataSheet4U.com EIC2224-15 ISSUED 04/04/2006 2.20 – 2.40 GHz 15W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES 2.20– 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 13.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 0.803 Excelics EIC2224-15 0.024 0.580 YYWW SN 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 ELECTRICAL CHARACTERISTICS (Ta = 25OC) SYMBOLS P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A Gain at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A f = 2.20-2.40GHz f = 2.20-2.40GHz Caution! ESD sensitive device. MIN 41.5 12.0 TYP 42.5 13.0 MAX UNIT dBm dB Gain Flatness f = 2.20-2.40GHz VDS = 10V, IDSQ ≈ 4.6A Power Added Efficiency at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A f = 2.20-2.40GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance2 f = 2.20-2.40GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 86mA ±0.6 35 4.8 8.6 -2.5 1.7 5.4 10.8 -4.0 1.9 o dB % A A V C/W Note: 1. Tested with 25 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reserve Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipati...