Internally Matched Power FET
www.DataSheet4U.com
EIC1415A-4
ISSUED 08/21/2007
14.40-15.40GHz 4-Watt Internally Matched Power FET
Excelics
EIC1415A-...
Description
www.DataSheet4U.com
EIC1415A-4
ISSUED 08/21/2007
14.40-15.40GHz 4-Watt Internally Matched Power FET
Excelics
EIC1415A-4
GATE DRAIN
FEATURES
14.40– 15.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43 dBc IM3 at Po = 25.0 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
.060 MIN.
.060 MIN.
.650±.008 .512
.319
YYWW SN
.094 .382
.022
.045 .004
.070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 14.40-15.40GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 14.40-15.40GHz Drain Current at 1dB Compression f = 14.40-15.40GHz
Caution! ESD sensitive device. MIN
35.5 4.5
TYP
36.0 5.0
MAX
UNITS
dBm dB
±0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0
o
dB %
1400
mA dBc mA V C/W
Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.40GHz
Saturated Drain Current Pinch-off Voltage Thermal Resistance
3
VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA
Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall...
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