EIC1415-4

www.DataSheet4U.com EIC1415-4 14.40-15.35 GHz 4-Watt Internally-Matched Power FET FEATURES 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -43 dBc IM3 at Po = 25.0 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC1415-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics’ unique MESFET transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 14.40-15.35GHz Drain Current at 1dB Compression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.35 GHz MIN 35.5 4.5 TYP 36.0 5.0 MAX UNITS dBm dB ±0.6 25 1100 -40 -43 2080 -2.5 5.5 2880 -4.0 6.0 o dB % 1300 mA dBc mA V C/W Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA Notes: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Leve...