EIC1415-3

www.DataSheet4U.com EIC1415-3 UPDATED 11/22/2004 14.40 – 15.35GHz 3-Watt Internally Matched Power FET .060 MIN. FEATURES 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +34.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 25% Power Added Efficiency -42 dBc IM3 at Po = 23.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH Excelics EIC1415-3 GATE DRAIN .060 MIN. .650±.008 .512 .319 .022 YM SN .094 .382 .045 .004 .070 ±.008 .129 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 Caution! ESD sensitive device. MIN 33.5 5.0 TYP 34.5 6.0 ±0.6 25 900 -38 -42* 1400 -2.5 8.0 1800 -4.0 9.0 o PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800mA Gain at 1dB Compression f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800mA Gain Flatness f = 14.40-15.35GHz VDS = 10 V, IDSQ ≈ 800mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 800mA f = 14.40-15.35GHz Drain Current at 1dB Compression f = 14.40-15.35GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 23.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 15.35GHz MAX UNITS dBm dB dB % 1100 mA dBc mA V C/W IDSS VP RTH Notes: 1. * Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 15 mA Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth ...