EIC1414-12

www.DataSheet4U.com EIC1414-12 ISSUED 6/30/2006 14.0-14.5 GHz 12-Watt Internally Matched Power FET Excelics EIC1414-12 .827±.010 .669 .120 M IN .120 M IN FEATURES 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 5.0 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package .024 .421 .125 .508±.008 .442 .168±.010 ALL DIM ENSIO NS IN IN CHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Gain Flatness f = 14.0-14.5GHz VDS = 10 V, IDSQ ≈ 3500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3500mA f = 14.0-14.5GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. 1,2 Caution! ESD sensitive device. MIN 39.5 4.0 TYP 40.5 5.0 MAX UNITS dBm dB ±0.6 20 3600 6000 -2.5 2.3 4200 7500 -4.0 2.6 o dB % mA mA V C/W f = 14.0-14.5GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA Note: 1) Tested with 50 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ...