EIC1314-12

www.DataSheet4U.com EIC1314-12 ISSUED 10/17/2008 13.75-14.50 GHz 12-Watt Internally Matched Power FET Excelics EIC1314-12 .827±.010 .669 .120 MIN FEATURES 13.75– 14.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 23% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain at 1dB Compression f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈ 4200mA Gain Flatness f = 13.75-14.50GHz VDS = 10 V, IDSQ ≈4200mA Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.0 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 14.50 GHz Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 4200mA f = 13.75-14.50GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 40.5 5 TYP 41 6 MAX UNITS dBm dB ±0.6 -42 -45 23 4200 8 -2.5 1.8 4800 10 -4.0 2.0 o dB dBc % mA A V C/W f = 13.75-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 62 mA Note: 1) Tested with 50 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting. MAXIMUM RATING ...