EIC1212-8

www.DataSheet4U.com EIC1212-8 UPDATED 01/04/2006 12.20-12.70 GHz 8-Watt Internally Matched Power FET Excelics EIC1212-8 .827±.010 .669 .120 MIN FEATURES 12.20– 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 12.70GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 Caution! ESD sensitive device. MIN 38.5 5.5 TYP 39.0 6.5 MAX UNITS dBm dB ±0.6 27 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o dB % 2600 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overal...