EIC1112-8

www.DataSheet4U.com EIC1112-8 ISSUED 07/03/2007 11.7-12.7 GHz 8-Watt Internally Matched Power FET 0.060 MIN 0.650±0.008 0.512 GATE FEATURES 11.7– 12.7GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 6.0dB Power Gain at 1dB Compression 30% Power Added Efficiency Hermetic Metal Flange Package Excelics EIC1112-8 0.060 MIN 0.022 0.319 DRAIN YYWW 2X 0.094 0.382 0.004 0.130 0.045 0.071±0.008 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 11.7-12.7GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 11.7-12.7GHz -40 Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 12.7GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 O MIN 38.5 5 TYP 39.5 6 MAX UNITS dBm dB ±0.6 30 2300 -43 4000 -2.5 3..5 5000 -4.0 4 o dB % 2800 mA dBc mA V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source V...