EIC1011-8

www.DataSheet4U.com EIC1011-8 UPDATED 08/21/2007 10.70-11.70GHz 8-Watt Internally Matched Power FET FEATURES 10.70–11.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 2200mA Gain Flatness f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression f = 10.7-11.7GHz VDS = 10 V, IDSQ ≈ 2200mA Drain Current at 1dB Compression f = 10.7-11.7GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f =11.7GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage VDS = 3 V, IDS = 40 mA 3 Thermal Resistance Caution! ESD sensitive device. MIN 38.5 5.0 TYP 39.0 6.0 ±0.6 30 2200 -43 -46 4000 -2.5 3.5 4500 -4.0 4.0 2600 MAX UNITS dBm dB dB % mA dBc mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 96mA -19.2mA 38.5dBm 175C -65C to +175C 37.5W CONTINUOUS2 10V -4V 28.8mA -4.8mA @ 3dB Compression 175C -65C ...