EIC1010A-20

www.DataSheet4U.com EIC1010A-20 ISSUED 07/03/2007 10.00-10.25 GHz 20-Watt Internally Matched Power FET Excelics EIC1010A-20 .945 .803 .079 MIN .079 MIN FEATURES 10.00– 10.25GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 6.0 dB Power Gain at 1dB Compression 27% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 YYWW SN .315 .685 .617 .004 .168 .055 ALL DIMENSIONS IN INCHES .095 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain at 1dB Compression f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Gain Flatness f = 10.00-10.25GHz VDS = 9 V, IDSQ ≈ 4000mA Power Added Efficiency at 1dB Compression VDS = 9 V, IDSQ ≈ 4000mA f = 10.00-10.25GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device. MIN 41.5 5.5 TYP 42.5 6.5 MAX UNITS dBm dB ±0.5 27 5500 14000 -2.5 1.4 6500 18000 -4.0 1.6 o dB % mA mA V C/W f = 10.00-10.25GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 140 mA 2) Overall Rth depends on case mounting. Note: 1) Tested with 25 Ohm gate resistor. MAXIMUM RATING (Case Temperature 25 ºC) SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipat...