EIC1010-4

www.DataSheet4U.com EIC1010-4 ISSUED 10/29/2008 10.0-10.70GHz 4-Watt Internally-Matched Power FET Excelics EIC1010-4 FEATURES 10.0–10.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 25.5 dBm SCL 100% Tested for DC, RF, and RTH YYWW SN ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL Freq P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Caution! ESD sensitive device. MIN 10 35.5 6.5 36.5 7.5 ±0.6 30 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o TYP MAX 10.7 UNITS Ghz dBm dB dB % Frequency Output Power at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA Drain Current at 1dB Compression Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance 3 1300 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA 2. S.C.L. = Single Carrier Level. Note: 1. Tested with 100 Ohm gate resistor. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE1 15V -5V 48mA -9.6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14.4mA -2.4mA @ 3dB Compression 175C -65C to +175C 25W V...