SHD118511B

SENSITRON www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4600, REV. - SHD118511 SHD118511A SHD118511B HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Features: Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Maximum Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IF(AV) IFSM EAS IAR RθJC TJ Tstg Condition 50% duty cycle, rectangular wave form (Single) 50% duty cycle, rectangular wave form (Common Cathode) 8.3 ms, half Sine wave (per leg) TJ = 25 °C, IAS = 3.0 A, L = 4.4 mH (per leg) IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR DC operation Max. 30 60 120 860 20 3.0 0.18 -65 to +150 -65 to +150 Units V A A A mJ A °C/W °C °C Electrical Characteristics Characteristics Max. Forward Voltage Drop (per leg) Max. Reverse Current (per leg) Max. Junction Capacitance (per leg) Symbol VF1 VF2 IR1 IR2 CT Condition @ 60A, Pulse, TJ = 25 °C @ 60A, Pulse, TJ = 125 °C @VR = 30V, Pulse, TJ = 25 °C @VR = 30V, Pulse, TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.53 0.43 6 30...