MSAGX60F60A

www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A 600 Volts 60 Amps 2.9 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only) Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX. 600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive load), RG= 4.7Ω, Tj= 125°C, VCE= 0.8 x VCES Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHX60F60A only) Pulse Source Current (Body Diode, MSAHX60F60A only) Thermal Resistance, Junction to Case Mechanical Outli...